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(R)
BTA/BTB06 Series
6A TRIACS
SNUBBERLESSTM, LOGIC LEVEL & STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IG (Q1) Value 6 600 and 800 5 to 50 Unit A V
G
A2
A1
A2
mA
DESCRIPTION Suitable for AC switching operations, the BTA/ BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave)
A1 A2 G
A1 A2 G
TO-220AB Insulated (BTA06)
TO-220AB (BTB06)
Value TO-220AB Tc = 110C 6 Tc = 105C t = 20 ms t = 16.7 ms 60 63 21 Tj = 125C Tj = 125C Tj = 125C 50 4 1 - 40 to + 150 - 40 to + 125
Unit A
TO-220AB Ins. ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz
A
I t dI/dt IGM PG(AV) Tstg Tj
tp = 10 ms F = 120 Hz tp = 20 s
A s A/s A W C
April 2002 - Ed: 5A
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BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s
SNUBBERLESSTM and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant TW IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) VD = 12 V RL = 30 I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125C (dV/dt)c = 0.1 V/s (dV/dt)c = 10 V/s Without snubber Tj = 125C Tj = 125C Tj = 125C MIN. MIN. MAX. 10 10 15 20 2.7 1.2 15 25 30 40 3.5 2.4 5 BTA/BTB06 SW 10 1.3 0.2 35 50 60 400 3.5 50 70 80 1000 5.3 V/s A/ms CW 35 BW 50 mA V V mA mA Unit
VD = VDRM RL = 3.3 k Tj = 125C IT = 100 mA IG = 1.2 IGT
s
STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB06 C IG (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 k Tj = 125C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. RL = 30 I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/s V/s B 50 100 mA V V mA mA Unit
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
STATIC CHARACTERISTICS
Symbol VT (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
Test Conditions ITM = 5.5 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.
Value 1.55 0.85 60 5 1
Unit V V m A mA
Threshold voltage Dynamic resistance VDRM = VRRM
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BTA/BTB06 Series
THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter TO-220AB TO-220AB Insulated TO-220AB TO-220AB Insulated Value 1.8 2.7 60 C/W Unit C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTA/BTB06-xxxB BTA/BTB06-xxxBW BTA/BTB06-xxxC BTA/BTB06-xxxCW BTA/BTB06-xxxSW BTA/BTB06-xxxTW
BTB: non insulated TO-220AB package
Sensitivity 800 V X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA X X X X X X
Type Standard Snubberless Standard Snubberless Logic level Logic level
Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
ORDERING INFORMATION
BT A 06 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 6A
600
BW
(RG)
PACKING MODE Blank: Bulk RG: Tube
VOLTAGE: 600: 600V 800: 800V
SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL
OTHER INFORMATION
Part Number BTA/BTB06-xxxyz BTA/BTB06-xxxyzRG Marking BTA/BTB06-xxxyz BTA/BTB06-xxxyz Weight 2.3 g 2.3 g Base quantity 250 50 Packing mode Bulk Tube
Note: xxx = voltage, y = sensitivity, z = type
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BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W) 8 7 6 5 4 3 2 1 0 0 1 2
IT(RMS)(A)
Fig. 2: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A) 7
BTB
6 5 4 3 2 1
Tc(C)
BTA
3
4
5
6
0
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K=[Zth/Rth] 1E+0
Zth(j-c)
Fig. 4: values).
ITM (A) 100
On-state
characteristics
(maximum
Tj max. Vto = 0.85 V Rd = 60 m
Tj=Tj max
1E-1
Zth(j-a)
10
tp(s)
1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
VTM(V)
1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM (A), It (As) 1000
Tj initial=25C
ITSM (A) 70 60 50 40 30 20 10 0 1
Repetitive Tc=105C Non repetitive Tj initial=25C
t=20ms
One cycle
dI/dt limitation: 50A/s ITSM
100
It
Number of cycles
tp (ms)
10
100
1000
10 0.01
0.10
1.00
10.00
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BTA/BTB06 Series
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT
Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 SW 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
1.5
IH & IL
TW BW/CW
1.0 0.5
Tj(C)
(dV/dt)c (V/s)
0.0 -40
-20
0
20
40
60
80
100
120
140
1.0
10.0
100.0
Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2
(dV/dt)c (V/s)
1
Tj(C)
1.0
10.0
100.0
0
0
25
50
75
100
125
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BTA/BTB06 Series
PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins.
DIMENSIONS
B C
REF.
Millimeters Min. Typ. 3.75 Max. Min.
Inches Typ. 0.147 Max. 0.625
b2
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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